Semiconductor apparatus, electronic device, and method of manufacturing semiconductor apparatus

ABSTRACT

Disclosed herein is a semiconductor apparatus including: a first semiconductor part including a first wiring; a second semiconductor part which is adhered to the first semiconductor part and which includes a second wiring electrically connected to the first wiring; and a metallic oxide formed by a reaction between oxygen and a metallic material which reacts with oxygen more easily than hydrogen does, the metallic oxide having been diffused into a region which includes a joint interface between the first wiring and the second wiring and the inside of at least one of the first wiring and the second wiring.

BACKGROUND

The present disclosure relates to a semiconductor apparatus, anelectronic device, and a method of manufacturing a semiconductorapparatus. More particularly, the present disclosure relates to asemiconductor apparatus, an electronic device, and a method ofmanufacturing a semiconductor apparatus in which joining of wirings isconducted by adhering two substrates to each other during manufacture.

A technology has been developed in which two wafers (substrates) areadhered to each other to join copper wirings formed on the wafers toeach other (the joining will hereafter be referred to as “Cu—Cu joining(or Cu—Cu joint)”). In such a joining technique, the joint surfaces (Cusurfaces) of the wafers are, before joining, subjected to a reducingtreatment such as chemical liquid cleaning (wet etching) or dry etchingso as to remove oxygen (oxides) from the Cu surfaces, thereby exposingclean Cu surfaces (refer, for example, to Japanese Patent Laid-open No.2007-234725, hereinafter referred to as Patent Document 1).

Patent Document 1 proposes a technology for manufacturing a solid-stateimaging device wherein a semiconductor layer in which a solid-stateimaging device is formed and a semiconductor layer in which a logiccircuit for controlling the solid-state imaging device is formed areadhered to each other. FIGS. 15A to 15D illustrate the procedure of thesolid-state imaging device manufacturing technique proposed in PatentDocument 1. In addition, FIGS. 16A to 16C show the procedure of Cu—Cujoining technique carried out in adhering the two semiconductor layersto each other in the technology proposed in Patent Document 1.

In the adhering technique described in Patent Document 1, first, an SOI(silicon on insulator) substrate 410 provided with a first semiconductorlayer 411 is prepared. In Patent Document 1, next, a solid-state imagingdevice 412 is formed in the first semiconductor layer 411, as shown inFIG. 15A. In this case, as shown in FIG. 16A, a first interlayerdielectric 413 is formed so as to cover the solid-state imaging device412, and, further, first electrodes 414 made, for example, of copper forleading out the electrodes of the solid-state imaging device 412 isformed in the first interlayer dielectric 413.

In addition, in Patent Document 1, as shown in FIG. 15B, a logic circuit423 for controlling the solid-state imaging device 412 is formed in asecond semiconductor layer 421 different from the first semiconductorlayer 411 in crystal orientation. In this instance, as shown in FIG.16B, a second interlayer dielectric 422 is formed so as to cover thelogic circuit 423, and second electrodes 424 made, for example, ofcopper for leading out the electrodes of the logic circuit 423 areformed in the second interlayer dielectric 422.

Subsequently, according to Patent Document 1, the first semiconductorlayer 411 and the second semiconductor layer 421 are adhered to eachother as shown in FIG. 15C. In this case, first, the surface of thefirst semiconductor layer 411 on the first interlayer dielectric 413side (the joint surfaces of the first electrodes 414) and the surface ofthe second semiconductor layer 421 on the second interlayer dielectric422 side (the joint surfaces of the second electrodes 424) are cleaned,for example, with diluted hydrofluoric acid, so as to remove oxides fromthe electrode surfaces. Next, as shown in FIG. 16C, alignment is carriedout so that the first electrodes 414 and the second electrodes 424 faceeach other, followed by adhering the first semiconductor layer 411 andthe second semiconductor layer 421 to each other.

Then, with the first semiconductor layer 411 and the secondsemiconductor layer 421 kept adhered to each other, a pressing andheating treatment is carried out, to join the first electrodes 414 andthe second electrodes 424 to each other. Thereafter, that portion of theSOI substrate 410 which is on the side opposite to the firstsemiconductor layer 411 side is removed, to expose the solid-stateimaging device 412 as shown in FIG. 15D. According to Patent Document 1,the first semiconductor layer 411 and the second semiconductor layer 421are adhered to each other (Cu—Cu joining between the first electrodes414 and the second electrodes 424 is carried out) in the above-mentionedmanner, thereby manufacturing the solid-state imaging apparatus.

SUMMARY

As above-mentioned, in relation to a manufacturing process of asemiconductor apparatus, for example, a solid-state imaging apparatus,there has been proposed a technology in which two wafers are adhered toeach other and Cu—Cu joining is effected. In this technical field,however, there is still a request for development of a semiconductorapparatus in which generation of such problems as defects in continuityat a Cu—Cu joint interface and a rise in wiring resistance is restrainedand which has a highly reliable Cu—Cu joint interface.

Thus, there is a need for a semiconductor apparatus having a highlyreliable Cu—Cu joint interface, an electronic device having a highlyreliable Cu—Cu joint interface, and a method of manufacturing asemiconductor apparatus having a highly reliable Cu—Cu joint interface.

According to an embodiment of the present disclosure, there is provideda semiconductor apparatus including:

a first semiconductor part including a first wiring;

a second semiconductor part which is adhered to the first semiconductorpart and which includes a second wiring electrically connected to thefirst wiring; and

a metallic oxide formed by a reaction between oxygen and a metallicmaterial which reacts with oxygen more easily than hydrogen does, themetallic oxide having been diffused into a region which includes a jointinterface between the first wiring and the second wiring and the insideof at least one of the first wiring and the second wiring.

In addition, according to another embodiment of the present disclosure,there is provided an electronic device including:

a first wiring part including a first wiring;

a second wiring part which is in the state of being adhered to the firstwiring part and which includes a second wiring electrically connected tothe first wiring; and

a metallic oxide formed by a reaction between oxygen and a metallicmaterial which reacts with oxygen more easily than hydrogen does, themetallic oxide having been diffused into a region which includes a jointinterface between the first wiring and the second wiring and the insideof at least one of the first wiring and the second wiring.

Furthermore, according to a further embodiment of the presentdisclosure, there is provided a method of manufacturing a semiconductorapparatus which has a first semiconductor part including a first wiringand a second semiconductor part including a second wiring, the methodincluding:

diffusing a metallic material which reacts with oxygen more easily thanhydrogen does, into the inside of at least one of the first wiring andthe second wiring;

adhering the first semiconductor part and the second semiconductor partto each other so that the first wiring and the second wiring areelectrically connected to each other; and

heating the first semiconductor part and the second semiconductor part,in the adhered state, so as to cause the metallic material and theoxygen to react with each other.

As above-mentioned, in the semiconductor apparatus (electronic device)and the manufacturing method therefor according to embodiments of thepresent disclosure, the metallic material which reacts with oxygen moreeasily than hydrogen does is preliminarily diffused into the inside ofat least one of the first wiring and the second wiring. This results inthat when the first semiconductor part and the second semiconductor partare adhered to each other, oxygen present in the vicinity of the jointinterface between the first wiring and the second wiring reacts with themetallic material, whereby generation of voids is restrained. Accordingto embodiments of the present disclosure, therefore, a semiconductorapparatus (electronic device) having a highly reliable joint interfacebetween a first wiring and a second wiring and a manufacturing methodtherefor can be provided.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a problem generated in a Cu—Cu joining treatment;

FIGS. 2A to 2D illustrate a problem generated in a Cu—Cu joiningtreatment;

FIGS. 3A to 3D illustrate the principle of a Cu—Cu joining techniqueaccording to an embodiment of the present disclosure;

FIG. 4 is a schematic sectional view of the vicinity of a Cu—Cu jointinterface in a semiconductor apparatus according to a first embodimentof the present disclosure;

FIGS. 5A to 5G are views for illustrating the procedure of fabricationof the semiconductor apparatus according to the first embodiment;

FIGS. 6A to 6G are views for illustrating the procedure of fabricationof a semiconductor apparatus according to a second embodiment of thepresent disclosure;

FIG. 7 is a schematic sectional view of the vicinity of a Cu—Cu jointinterface in a semiconductor apparatus according to a third embodimentof the present disclosure;

FIGS. 8A to 8J are views for illustrating the procedure of fabricationof the semiconductor apparatus according to the third embodiment;

FIGS. 9A to 9I are views for illustrating the procedure of fabricationof a semiconductor apparatus according to a fourth embodiment of thepresent disclosure;

FIG. 10 is a schematic sectional view of the vicinity of a Cu—Cu jointinterface in a semiconductor apparatus according to Modification 1;

FIG. 11 is a view for illustrating the procedure of formation of anoxygen gettering layer in the semiconductor apparatus according toModification 2;

FIG. 12 illustrates a configuration example of a semiconductor apparatusaccording to Application Example 1 in which the Cu—Cu joining techniqueaccording to an embodiment of the present disclosure can be applied;

FIG. 13 illustrates a configuration example of a semiconductor apparatusaccording to Application Example 2 in which the Cu—Cu joining techniqueaccording to an embodiment of the present disclosure can be applied;

FIG. 14 illustrates a configuration example of an electronic apparatusaccording to Application Example 3 in which the Cu—Cu joining techniqueaccording to an embodiment of the present disclosure can be applied;

FIGS. 15A to 15D illustrate the procedure of a technique formanufacturing a solid-state imaging apparatus according to a relatedart; and

FIGS. 16A to 16C illustrate a Cu—Cu joining technique according to arelated art.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Now, examples of a semiconductor apparatus and a manufacturing techniquetherefor according to embodiments of the present disclosure will bedescribed below, referring to the drawings and in the following order.It is to be noted, however, that the present disclosure is notrestricted to the following examples.

1. Outline of Cu—Cu Joining Technique 2. First Embodiment 3. SecondEmbodiment 4. Third Embodiment 5. Fourth Embodiment 6. VariousModifications 7. Various Application Examples 1. Outline of Cu—CuJoining Technique Problems Involved in Cu—Cu Joining Technique Accordingto Related Art

First, before describing a Cu—Cu joining technique according to anembodiment of the present disclosure, the problems which may begenerated in Cu—Cu joining techniques according to the related art willbe described, referring to FIG. 1 and FIGS. 2A to 2D.

Incidentally, FIG. 1 is a schematic sectional view of the vicinity of aCu—Cu joint interface in a semiconductor apparatus fabricated byadhering two substrates to each other. FIGS. 2A to 2D illustrate thetreatment procedure in the Cu—Cu joining technique according to therelated art. It is to be noted here that in FIGS. 2A to 2D, forsimplification of description, only a part of a Cu—Cu joint interface(for instance, the region surrounded by broken line A in FIG. 1) isshown in an enlarged form.

A semiconductor apparatus 100 shown in FIG. 1 includes a first substrate110 (in FIG. 1, the substrate on the lower side), a first SiO₂ layer 111(dielectric), and a first Cu wiring 112. Further, the semiconductorapparatus 100 includes a second substrate 120 (in FIG. 1, the substrateon the upper side), a second SiO₂ layer 121, and a second Cu wiring 122.Though not shown in FIG. 1, a Cu barrier layer (each of a first Cubarrier layer 113 and a second Cu barrier layer 123 in FIGS. 2A to 2D)is formed at the interface between each SiO₂ layer and each Cu wiring.

In the semiconductor apparatus 100 shown in FIG. 1, the first Cu wiring112 is formed on the surface on one side of the first substrate 110 byway of the first SiO₂ layer 111 therebetween, and the second Cu wiring122 is formed on the surface on one side of the second substrate 120 byway of the second SiO₂ layer 121 therebetween. In the example shown inFIG. 1, the first Cu wiring 112 and the second Cu wiring 122 aredisposed to face each other, and, in this condition, the first substrate110 and the second substrate 120 are adhered to each other, to fabricatethe semiconductor apparatus 100.

Now, problems which may be generated in performing the Cu—Cu joining infabricating the semiconductor apparatus 100 shown in FIG. 1 will bespecifically described, referring to FIGS. 2A to 2D.

First, normally, prior to adhesion of the first substrate 110 and thesecond substrate 120 to each other, the joint-side surfaces of the Cuwirings are subjected to a reducing treatment, such as chemical liquidcleaning (wet etching) or dry etching, to remove oxygen (oxides) fromthe joint-side surfaces of the Cu wirings. The state of the vicinity ofthe joint-side surface of each Cu wiring after the reducing treatment isillustrated in FIG. 2A.

Even if the joint-side surface of the first Cu wiring 112 is subjectedto the above-mentioned reducing treatment, it is practically difficultto completely remove oxygen 130 from the joint-side surface of the firstCu wiring 112. Therefore, the joint-side surface of the first Cu wiring112 after the reducing treatment is in a state wherein some oxygen 130is left, as shown in FIG. 2A. Also, even if the joint-side surface ofthe second Cu wiring 122 is subjected to the above-mentioned reducingtreatment, some oxygen 130 is similarly left on the joint-side surfaceof the second Cu wiring 122.

Next, in the condition where oxygen 130 is left on the joint-sidesurfaces of the Cu wirings, the first substrate 110 and the secondsubstrate 120 are adhered to each other, resulting in that the oxygen130 is left at a joint interface (joint surface) Sj between the first Cuwiring 112 and the second Cu wiring 122, as shown in FIG. 2B. The oxygen130 thus remaining at the joint interface Sj constitutes one of thecauses of void formation.

Specifically, for example, when the first substrate 110 and the secondsubstrate 120 in the mutually adhered state are subjected to a heatingtreatment, the treatment causes hydrogen diffused in the Cu wirings andthe oxygen 130 remaining at the joint interface Sj to react with eachother, forming water (water vapor). As a result, voids 140 are formed atthe joint interface Sj between the first Cu wiring 112 and the second Cuwiring 122, as shown in FIG. 2C.

When the heating treatment is continued thereafter, the voids 140generated at the joint interface Sj aggregate, leading to an increase inthe size of the voids 140 as shown in FIG. 2D. Upon generation of thelarge-sized voids 140 at the joint interface Sj in this manner, such aphenomenon as defects in continuity or an increase in wiring resistancemay occur at the Cu—Cu joint interface, thereby lowering the reliabilityof the semiconductor apparatus 100. Incidentally, the above-mentionedproblem may be a serious problem, for example in a use wherein the jointbetween the wiring patterns is several micrometers or below in size.

[Outline of Cu—Cu Joining Technique According to an Embodiment of thePresent Disclosure]

An embodiment of the present disclosure proposes a Cu—Cu joiningtechnique which lowers the possibility of generation of voids 140 at thejoint interface Sj, so as to solve the above-mentioned problem. Here,referring to FIGS. 3A to 3D, an outline of the Cu—Cu joining techniqueaccording to an embodiment of the present disclosure and the principleof restraining formation of voids 140 in the present disclosure will bedescribed. FIGS. 3A to 3D illustrate the treatment procedure of theCu—Cu joining technique according to an embodiment of the presentdisclosure. In FIGS. 3A to 3D, for simplification of description, only apart of the Cu—Cu joint interface (for example, the region surrounded bybroken line A in FIG. 1) is shown in an enlarged form. Besides, in anexample shown in FIGS. 3A to 3D, the same components as those in theexample shown in FIGS. 2A to 2D above are denoted by the same referencesymbols as used above. Furthermore, in FIGS. 3A to 3C, forsimplification of description, only the configuration of the vicinity ofthe Cu joint interface on the first substrate 110 side is illustrated.

In the present disclosure, first, as shown in FIG. 3A, a first oxygengettering layer 151 and a first Cu barrier layer 113 are providedbetween a first Cu wiring 112 and a first SiO₂ layer 111 in a firstsubstrate 110, which is not shown in FIGS. 3A to 3D. The first oxygengettering layer 151 and the first Cu barrier layer 113 are disposed inthis order along the direction from the first Cu wiring 112 toward thefirst SiO₂ layer 111.

The first oxygen gettering layer 151 has a Cu layer containing ametallic material which reacts with oxygen more easily than hydrogendoes (the metallic material will hereafter be referred to as the“gettering material”). More specifically, the first oxygen getteringlayer 151 contains a gettering material which forms a metallic oxide byreacting with oxygen at a standard energy of formation lower than thestandard energy of formation necessary for hydrogen and oxygen to reactwith each other to form water. Incidentally, the content of thegettering material in the first oxygen gettering layer 151 may be setarbitrarily according to such conditions as the intended use (requiredreliability); for example, the gettering material content may be a fewpercent.

Or, in the present disclosure, the first oxygen gettering layer 151 maybe formed of the gettering material. It is to be noted here, however,that a configuration in which the first oxygen gettering layer 151 iscomposed of a Cu layer containing the gettering material has a merit asfollows. In the case where the first Cu wiring 112 is formed on thefirst oxygen gettering layer 151 by a plating method, for example, theCu contained in the first oxygen gettering layer 151 can be utilized asnuclei for formation of the first Cu wiring 112.

The gettering material may be any metallic material that has theabove-mentioned property. Examples of the metallic material which can beused as the gettering material include Fe, Mn, V, Cr, Mg, Si, Ce, Ti,and Al. Among these gettering materials, Mn, Mg, Ti and Al are materialssuitable for use in semiconductor apparatuses. Furthermore, from theviewpoint of lowering the wiring resistance in the vicinity of the jointinterface, it is particularly preferable to use Mn or Ti as thegettering material. Besides, either only one of the above-mentionedmetallic materials or a plurality of the metallic materials may becontained in the first oxygen gettering layer 151 as gettering material.

In addition, the first Cu barrier layer 113 not only prevents diffusionof Cu from the first oxygen gettering layer 151 into the first SiO₂layer 111 but also prevents diffusion of the gettering materialcontained in the first oxygen gettering layer 151 into the first SiO₂layer 111. Incidentally, the first Cu barrier layer 113 is formed, forexample, from Ti, Ta, Ru, or a nitride thereof. Incidentally, in orderthat diffusion of the gettering material from the first oxygen getteringlayer 151 into the first SiO₂ layer 111 is prevented more securely, itis preferable to form the first Cu barrier layer 113 from nitride of Ti,nitride of Ta, or nitride of Ru.

Next, after the first oxygen gettering layer 151 and the first Cubarrier layer 113 configured as above are provided between the first Cuwiring 112 and the first SiO₂ layer 111, the first Cu wiring 112 isannealed (is subjected to a heating treatment). This annealing treatmentcauses the gettering material 160 contained in the first oxygengettering layer 151 to diffuse from the first oxygen gettering layer 151into the first Cu wiring 112, as shown in FIG. 3B. Incidentally, theconcentration of the gettering material 160 thus diffusing into thefirst Cu wiring 112 can be controlled by appropriately setting thecontent of the gettering material 160 in the first oxygen getteringlayer 151.

Subsequently, the joint-side surface of the first Cu wiring 112 issubjected to a reducing treatment such as chemical liquid cleaning (wetetching) or dry etching, to remove oxygen (oxides) from the joint-sidesurface of the first Cu wiring 112. Even by the reducing treatment,however, it is difficult to completely remove oxygen (oxides) from thejoint-side surface of the first Cu wiring 112. As shown in FIG. 3C,therefore, some oxygen 130 is left on the joint-side surface of thefirst Cu wiring 112 after the reducing treatment.

In addition, the various treatments described referring to FIGS. 3A to3C above are applied also to the second substrate 120 (not shown inFIGS. 3A to 3D). Specifically, a second oxygen gettering layer 152 (seeFIG. 3D) containing a gettering material which reacts with oxygen moreeasily than hydrogen does is provided between a second Cu wiring 122 anda second Cu barrier layer 123. Then, the second Cu wiring 122 isannealed to cause the gettering material 160 to diffuse into the secondCu wiring 122, followed by the above-mentioned reducing treatment of thejoint-side surface of the second Cu wiring 122.

Next, the first substrate 110 and the second substrate 120 having beensubjected to the above-mentioned various treatments are adhered to eachother, and the first Cu wiring 112 and the second Cu wiring 122 arejoined to each other. Incidentally, in this case, some oxygen 130 isleft at the joint interface Sj between the first Cu wiring 112 and thesecond Cu wiring 122. Then, the first substrate 110 and the secondsubstrate 120 in the mutually adhered state are subjected to a heatingtreatment.

This heating treatment causes the oxygen 130 remaining in the vicinityof the joint interface Sj to react with the gettering material 160 (tobe trapped by the gettering material 160) which reacts with oxygen moreeasily than hydrogen diffusing through each Cu wiring does. This resultsin that, as shown in FIG. 3D, a metallic oxide 161 formed by a reactionbetween the oxygen 130 and the gettering material 160 is dispersed ineach Cu wiring, particularly, in the vicinity of the joint interface Sj.Consequently, formation of water (water vapor) is restrained, and voidformation is thereby prevented, in the vicinity of the joint interfaceSj.

As above-mentioned, in the Cu—Cu joining technique according to anembodiment of the present disclosure, the gettering material 160 whichreacts with oxygen more easily than hydrogen does is preliminarilydiffused into the Cu wiring on each substrate, particularly, into thevicinity of the joint interface Sj. Besides, at the time of Cu—Cujoining, oxygen 130 remaining in the vicinity of the joint interface Sjis trapped by the gettering material 160, whereby generation of voids atthe Cu—Cu joint interface is restrained. According to the Cu—Cu joiningtechnique in the present disclosure, therefore, such problems as defectsin continuity, an increase in wiring resistance and a lowering inreliability of the semiconductor apparatus can be solved.

Incidentally, while an example in which the first Cu barrier layer 113is composed of a single layer has been described in the example shown inFIGS. 3A to 3D, this configuration is not restrictive. For instance, thefirst Cu barrier layer 113 may be composed of two layers including a Ti,Ta or Ru nitride layer and a Ti, Ta or Ru layer. It is to be noted here,however, that in this case from the viewpoint of preventing diffusion ofthe gettering material 160, the Ti, Ta or Ru nitride layer and the Ti,Ta or Ru layer are preferably disposed in this order along the directionfrom the first SiO₂ layer 111 toward the first Cu wiring 112.

Furthermore, where the first Cu barrier layer 113 is formed of Ti, thefirst Cu barrier layer 113 may be made to serve also as the first oxygengettering layer 151. In addition, where the gettering material isdiffused in the surface of the first SiO₂ layer 111, the need to providethe first oxygen gettering layer 151 and the first Cu barrier layer 113may be eliminated. Besides, a configuration may be adopted in which thefirst oxygen gettering layer 151 is formed directly on the first SiO₂layer 111, without providing the first Cu barrier layer 113.

2. First Embodiment Configuration of Semiconductor Apparatus

FIG. 4 shows a configuration example of a first embodiment of thesemiconductor apparatus, for example, a solid-state imaging apparatus,fabricated by use of the Cu—Cu joining technique according to anembodiment of the present disclosure as described referring to FIGS. 3Ato 3D above. FIG. 4 is a schematic sectional view of the vicinity of theCu—Cu joint interface in the semiconductor apparatus according to thefirst embodiment. Incidentally, in FIG. 4, for simplification ofdescription, only the schematic configuration of the vicinity of oneCu—Cu joint interface is shown.

As shown in FIG. 4, the semiconductor apparatus 1 includes a firstwiring part 10 (first semiconductor part) and a second wiring part 20(second semiconductor part). In this embodiment, the surface of thefirst wiring part 10 on the side of a first interlayer dielectric 15(described later) and the surface of the second wiring part 20 on theside of a second interlayer dielectric 25 (described later) are adheredto each other, whereby the semiconductor apparatus 1 is fabricated.

The first wiring part 10 includes a first semiconductor substrate (notshown), a first SiO₂ layer 11, a first Cu barrier film 12, a first Cuwiring body 13, a first Cu diffusion preventive film 14, the firstinterlayer dielectric 15, a first Cu barrier layer 16, a first oxygengettering layer 17, and a first Cu wiring joint part 18.

The first SiO₂ layer 11 is formed on the first semiconductor substrate.The first Cu wiring body 13 is formed so as to be buried in the surface,on the side opposite to the first substrate side, of the first SiO₂layer 11. Incidentally, the first Cu wiring body 13 is connected to apredetermined device, circuit or the like in the semiconductor apparatus1 that is not shown in the figure.

The first Cu barrier film 12 is formed between the first SiO₂ layer 11and the first Cu wiring body 13. Incidentally, the first Cu barrier film12 is a thin film for preventing diffusion of copper (Cu) from the firstCu wiring body 13 into the first SiO₂ layer 11.

The first Cu diffusion preventive film 14 is formed over the region ofthe first SiO₂ layer 11 and the first Cu wiring body 13, and over theregion other than the region in which the first Cu wiring joint part 18is formed. In addition, the first interlayer dielectric 15 is formed onthe first Cu diffusion preventive film 14. Incidentally, the first Cudiffusion preventive film 14 is a thin film for preventing diffusion ofcopper (Cu) from the first Cu wiring body 13 into the first interlayerdielectric 15, and is composed of a thin film of, for example, SiC, SiN,SiCN or the like.

Besides, in the present embodiment, as shown in FIG. 4, the first Cubarrier layer 16 and the first oxygen gettering layer 17 are formedbetween the first Cu wiring joint part 18 (first wiring) and the firstCu wiring body 13, the first Cu diffusion preventive film 14 and thefirst interlayer dielectric 15. Incidentally, the first oxygen getteringlayer 17 and the first Cu barrier layer 16 are formed in this order fromthe side of the first Cu wiring joint part 18. Specifically, the firstoxygen gettering layer 17 is so formed as to cover the surface of thefirst Cu wiring joint part 18 on the first Cu wiring body 13 side andthe surfaces of the first Cu wiring joint part 18 on the firstinterlayer dielectric 15 side. In addition, the first Cu barrier layer16 is so formed as to cover the surface of the first oxygen getteringlayer 17 on the first Cu wiring body 13 side and the surfaces of thefirst oxygen gettering layer 17 on the first interlayer dielectric 15side.

Furthermore, in the present embodiment, a metallic oxide 17 b, which isformed by a reaction between the gettering material having diffused fromthe first oxygen gettering layer 17 and oxygen having remained in thevicinity of a joint interface Sj before joining, is dispersedly presentin the inside of the first Cu wiring joint part 18 and in the vicinityof the joint-side surface of the first Cu wiring joint part 18.Incidentally, though not shown in FIG. 4, not only the metallic oxide 17b but also the gettering material not having reacted with oxygen may bepresent in the inside of the first Cu wiring joint part 18 and in thevicinity of the joint-side surface of the first Cu wiring joint part 18.In addition, in the case where a plurality of kinds of getteringmaterials are contained in the first oxygen gettering layer 17, aplurality of metallic oxides 17 b are dispersedly present in the insideof the first Cu wiring joint part 18 and in the vicinity of thejoint-side surface of the first Cu wiring joint part 18.

The second wiring part 20 includes a second semiconductor substrate (notshown), a second SiO₂ layer 21, a second Cu barrier film 22, a second Cuwiring body 23, a second Cu diffusion preventive film 24, the secondinterlayer dielectric 25, a second Cu barrier layer 26, a second oxygengettering layer 27, and a second Cu wiring joint part 28.

Incidentally, in this embodiment, the second semiconductor substrate,the second SiO₂ layer 21, and the second Cu barrier film 22 of thesecond wiring part 20 are configured in the same manner as the firstsemiconductor substrate, the first SiO₂ layer 11, and the first Cubarrier film 12 of the first wiring part 10, respectively. Besides, thesecond Cu wiring body 23, the second Cu diffusion preventive film 24,and the second interlayer dielectric 25 of the second wiring part 20 areconfigured in the same manner as the first Cu wiring body 13, the firstCu diffusion preventive film 14, and the first interlayer dielectric 15of the first wiring part 10, respectively. Furthermore, the second Cubarrier layer 26, the second oxygen gettering layer 27, and the secondCu wiring joint part 28 (second wiring) of the second wiring part 20 arealso configured in the same manner as the first Cu barrier layer 16, thefirst oxygen gettering layer 17, and the first Cu wiring joint part 18of the first wiring part 10, respectively. In addition, the positionalrelationships among the components of the second wiring part 20 are thesame as those in the first wiring part 10.

In the semiconductor apparatus 1 configured as above, as shown in FIG.4, a current 40 flows from the second Cu wiring body 23 of the secondwiring part 20 and then through the second Cu barrier layer 26 and thesecond oxygen gettering layer 27, into the joint portion between thesecond Cu wiring joint part 28 and the first Cu wiring joint part 18.Then, the current 40 having flowed into the joint portion between thesecond Cu wiring joint part 28 and the first Cu wiring joint part 18flows through the first oxygen gettering layer 17 and the first Cubarrier layer 16 into the first Cu wiring body 13.

[Semiconductor Apparatus Manufacturing Technique (Cu—Cu JoiningTechnique)]

Now, a technique of manufacturing the semiconductor apparatus 1according to the present embodiment will be described below, referringto FIGS. 5A to 5G. In FIGS. 5A to 5G, only the treatment procedure of aCu—Cu joining step in the semiconductor apparatus 1 according to thisembodiment will mainly be shown. Therefore, FIGS. 5A to 5G show aschematic section in the vicinity of a Cu—Cu joint interface. Inaddition, a second wiring part 20 can be fabricated in the same manneras a first wiring part 10 in this embodiment. Therefore, as for othertreatments (FIGS. 5A to 5F) than an adhering treatment (FIG. 5G), onlytreatments of the first wiring part 10 will be described here, forsimplification of description.

In the present embodiment, though not shown, first, a first Cu barrierfilm 12 and a first Cu wiring body 13 are formed in this order in apredetermined region on the surface on one side of a first SiO₂ layer 11(underlying dielectric layer). In this case, the first Cu wiring body 13is so formed as to be buried in the first SiO₂ layer 11. Next, as shownin FIG. 5A, a first Cu diffusion preventive film 14 is formed on thesurface on the first Cu wiring body 13 side of a wiring structure partincluding the first SiO₂ layer 11, the first Cu barrier film 12 and thefirst Cu wiring body 13. Incidentally, the first SiO₂ layer 11, thefirst Cu barrier film 12, the first Cu wiring body 13 and the first Cudiffusion preventive film 14 can be formed in the same manner as in atechnique of manufacturing a semiconductor apparatus such as asolid-state imaging apparatus according to the related art (see, forexample, Japanese Patent No. 4193438).

Subsequently, in this embodiment, as shown in FIG. 5B, a firstinterlayer dielectric 15 is formed on the first Cu diffusion preventivefilm 14. In this instance, for example, a SiO₂ film or acarbon-containing silicon oxide (SiOC) film having a thickness of about50 to 500 nm is formed on the first Cu diffusion preventive film 14, toform the first interlayer dielectric 15. Such a first interlayerdielectric 15 can be formed, for example, by a CVD (Chemical VaporDeposition) or spin coating. Next, a resist 50 is formed on the firstinterlayer dielectric 15. Thereafter, the resist 50 is subjected to apatterning treatment by use of a photolithographic technique to removethe resist 50 from a region where to form a first Cu wiring joint part18, whereby an opening part 50 a is formed.

Next, as shown in FIG. 5C, for example by use of a known etchingapparatus of a magnetron system, a dry etching treatment is applied fromthe side of the patterned resist 50, whereby the region of the firstinterlayer dielectric 15 exposed in the opening part 50 a of the resist50 is etched away. In this etching treatment, as shown in FIG. 5C, thefirst interlayer dielectric 15 and the first Cu diffusion preventivefilm 14 in the region of the opening part 50 a of the resist 50 areremoved, whereby the first Cu wiring body 13 is exposed in an openingpart 15 a of the first interlayer dielectric 15. Thereafter, the thusetched surface is subjected to an asking treatment using, for example,an oxygen (O₂) plasma and to a cleaning treatment using an organic aminechemical liquid, whereby the resist 50 remaining on the first interlayerdielectric 15 and the residue deposited upon the etching treatment areremoved.

Subsequently, as shown in FIG. 5D, a first Cu barrier layer 16 of Ti,Ta, Ru or a nitride thereof is formed on the first interlayer dielectric15 and on the first Cu wiring body 13 exposed in the opening part 15 aof the first interlayer dielectric 15. In this case, the first Cubarrier layer 16 having a thickness of about 5 to 50 nm is formed in anAr/N₂ atmosphere by use of such a technique as RF (Radio Frequency)sputtering, for example. Next, a first oxygen gettering layer 17 isformed in a thickness of about 1 to 50 nm on the first Cu barrier layer16 by use of such a technique as RF sputtering, for example. Thereafter,a Cu film 51 is formed on the first oxygen gettering layer 17 by such atechnique as electrolytic plating or sputtering, for example. As aresult of these treatments, the Cu film 51 is buried in the region ofthe opening part 15 a of the first interlayer dielectric 15, as shown inFIG. 5D.

Next, the film formed member with the Cu film 51 buried in the region ofthe opening part 15 a of the first interlayer dielectric 15 is heated atabout 100 to 400° C. for about 1 to 60 minutes in a nitrogen atmosphereor vacuum by use of such a heating apparatus as a hot plate or asintering-annealing apparatus, for example. This heating treatment iscarried out not only for tightening the Cu film 51 to form a denser Cufilm 51 but also for causing the gettering material contained in thefirst oxygen gettering layer 17 to diffuse into the Cu film 51. As aresult of the heating treatment, therefore, the gettering material 17 acontained in the first oxygen gettering layer 17 is diffused (dispersed)into the Cu film 51, as shown in FIG. 5E. Incidentally, in the presentembodiment, the conditions of the heating treatment are so controlledthat a sufficient amount of the gettering material 17 a is diffused intothe Cu film 51.

Then, as shown in FIG. 5F, unnecessary portions of the Cu film 51, thefirst Cu barrier layer 16, and the first oxygen gettering layer 17 areremoved by chemical-mechanical polishing (CMP). Specifically, thesurface of the film formed member on the Cu film 51 side is polished byCMP until the first interlayer dielectric 15 is exposed to the surface.

In the present embodiment, the treatments described referring to FIGS.5A to 5F above are carried out, to fabricate a first wiring part 10.Besides, in this embodiment, a second wiring part 20 is fabricated inthe same manner as the first wiring part 10.

Then, as shown in FIG. 5G, the first wiring part 10 and the secondwiring part 20 fabricated by the above-mentioned treatment procedure areadhered to each other. Specific treatment steps of this adheringtreatment are as follows.

First, the surface on the first Cu wiring joint part 18 side of thefirst wiring part 10 and the surface on the second Cu wiring joint part28 side of the second wiring part 20 are subjected to a reducingtreatment, to remove oxide film (oxides) from the Cu surface of eachwiring joint part. This ensures that clean Cu is exposed at the Cusurfaces of the each wiring joint part. Incidentally, as the reducingtreatment in this instance, there can be used a wet etching treatmentbased on the use of, for example, formic acid or a dry etching treatmentbased on the use of, for example, an Ar, NH₃, H₂ or the like plasma.

Next, the surface on the first Cu wiring joint part 18 side of the firstwiring part 10 and the surface on the second Cu wiring joint part 28side of the second wiring part 20 are brought into contact with (adheredto) each other. In this case, the first Cu wiring joint part 18 and thesecond Cu wiring joint part 28 are aligned to face each other, beforethe adhesion.

Subsequently, the adhered member having the first wiring part 10 and thesecond wiring part 20 in the adhered state is annealed by use of aheating apparatus, for example, a hot plate or an RTA (Rapid ThermalAnnealing) apparatus, to join the first Cu wiring joint part 18 and thesecond Cu wiring joint part 28 to each other. Specifically, the adheredmember is heated at about 100 to 400° C. for about five minutes to twohours in a N₂ atmosphere at the atmospheric pressure or in vacuum, forexample. In this case, oxygen remaining in the vicinity of the jointinterface Sj between the first wiring part 10 and the second wiring part20 reacts with the gettering material(s) 17 a preliminarily diffusedinto the vicinity of the joint interface Sj and into the inside of theCu wiring joint parts, to form a metallic oxide(s) 17 b.

In the present embodiment, the Cu—Cu joining step is carried out in thismanner. Incidentally, other steps for manufacturing the semiconductorapparatus 1 than the above-described Cu—Cu joining step can be performedin the same manner as, for example, in a semiconductor apparatusmanufacturing method according to a related art.

As above-described, in the semiconductor apparatus 1 according to thisembodiment, prior to joining of the first wiring part 10 and the secondwiring part 20, the gettering material 17 a which reacts with oxygenmore easily than hydrogen does is preliminarily diffused into the insideof each Cu wiring joint part and into the vicinity of the joint-sidesurface of each Cu wiring joint part. This ensures that upon theannealing treatment in joining the first wiring part 10 and the secondwiring part 20 to each other, oxygen remaining in the vicinity of thejoint interface Sj is trapped by the gettering material 17 a in the Cuwiring joint parts. As a result, formation of water (water vapor), whichwould lead to void formation, is restrained from occurring in thevicinity of the joint interface Sj. According to this embodiment,therefore, it is possible to provide a semiconductor apparatus 1 havinga more reliable Cu—Cu joint interface.

Besides, in this embodiment, since generation of voids in the vicinityof the joint interface Sj can be restrained, an increase in connectionresistance can be suppressed. As a result, problems which might begenerated attendantly on an increase in connection resistance, such asheat generation and a delay in processing circuits, can be restrained;accordingly, a lowering in the processing speed of the semiconductorapparatus 1 can be prevented.

Furthermore, in the present embodiment, both the heating treatment fortightening the Cu film 51 to form a denser Cu film 51 and the heatingtreatment for diffusing the gettering material 17 a into the Cu film 51can be carried out by a single heating treatment. In this embodiment,therefore, the number of process steps in manufacturing thesemiconductor apparatus 1 can be reduced.

3. Second Embodiment

In the second embodiment of the present disclosure, an example whereinthe semiconductor apparatus 1 of the first embodiment describedreferring to FIG. 4 above is manufactured by a technique different fromthat in the first embodiment will be described. Accordingly, indescribing this embodiment, descriptions of the configuration of thesemiconductor apparatus 1 will be omitted, and only the manufacturingtechnique therefor will be described.

The technique of manufacturing the semiconductor apparatus 1 accordingto the present embodiment will be described referring to FIGS. 6A to 6G.Incidentally, in FIGS. 6A to 6G, only the treatment procedure of a Cu—Cujoining step in the semiconductor apparatus 1 according to thisembodiment will be mainly shown. Therefore, FIGS. 6A to 6G show aschematic section in the vicinity of a Cu—Cu joint interface. Besides,in this embodiment, a second wiring part 20 can be fabricated in thesame manner as a first wiring part 10. Therefore, as for othertreatments (FIGS. 6A to 6F) than an adhering treatment (FIG. 6G), onlythe treatments of the first wiring part 10 will be described here, forsimplification of description. Incidentally, the other steps formanufacturing the semiconductor apparatus 1 than the Cu—Cu joining stepcan be carried out in the same manner, for example, as in a method ofmanufacturing a semiconductor apparatus such as a solid-state imagingapparatus according to a related art.

As is clear from comparison of FIGS. 6A to 6C with FIGS. 5A to 5C, thetreatments ranging from the formation of the wiring structure parthaving a first SiO₂ layer 11, a first Cu barrier film 12 and a first Cuwiring body 13 to the patterning of a first interlayer dielectric 15 inthis second embodiment are the same as those in the first embodimentabove. Therefore, descriptions of the treatments shown in FIGS. 6A to 6Care omitted here.

After the first Cu wiring body 13 is exposed in an opening part 15 a ofthe first interlayer dielectric 15 by an etching treatment shown in FIG.6C, a first Cu barrier layer 16 is formed on the surface on the openingpart 15 a side of the first interlayer dielectric 15 as shown in FIG.6D, in the same manner as in the first embodiment above. Next, a firstoxygen gettering layer 17 is formed in a thickness of about 1 to 50 nmon the first Cu barrier layer 16, in the same manner as in the firstembodiment above. Subsequently, a Cu film 51 is formed on the firstoxygen gettering layer 17 by such a technique as electrolytic plating orsputtering. By these treatments, the Cu film 51 is buried in the regionof the opening part 15 a of the first interlayer dielectric 15, as shownin FIG. 6D.

Next, the film formed member having the Cu film 51 buried in the regionof the opening part 15 a of the first interlayer dielectric 15 issubjected to a heating treatment, whereby the Cu film 51 is tightened toform a denser Cu film 51. Incidentally, this heating treatment iscarried out in such heating conditions that the gettering material(s)contained in the first oxygen gettering layer 17 would not diffuse intothe Cu film 51.

Subsequently, as shown in FIG. 6E, unnecessary portions of the Cu film51, the first Cu barrier layer 16, and the first oxygen gettering layer17 are removed by CMP. Specifically, the surface on the Cu film 51 sideof the film formed member is polished by CMP until the first interlayerdielectric 15 is exposed to the surface. As a result, a first Cu wiringjoint part 18 is formed.

Next, after the polishing treatment, the film formed member is heated atabout 100 to 400° C. for about 1 to 60 minutes in a nitrogen atmosphereor vacuum by use of such a heating apparatus as a hot plate or asintering-annealing apparatus. By this heating treatment, in the presentembodiment, the gettering material 17 a contained in the first oxygengettering layer 17 is diffused into the Cu film 51. Therefore, thisheating treatment causes the gettering material 17 a to be diffused(dispersed) into the vicinity of the joint-side surface of the first Cuwiring joint part 18 and into the inside of the first Cu wiring jointpart 18, as shown in FIG. 6F.

In the present embodiment, the above-described treatments shown in FIGS.6A to 6F are carried out, to fabricate the first wiring part 10.Besides, in this embodiment, the second wiring part 20 is fabricated inthe same manner as the first wiring part 10. Then, as shown in FIG. 6G,the first wiring part 10 and the second wiring part 20 fabricatedfollowing the above-mentioned treatment procedure are adhered to eachother. The adhering treatment is the same as the adhering treatment(FIG. 5G) described in the first embodiment above, and, therefore,description thereof is omitted here.

In the present embodiment, the semiconductor apparatus 1 is manufacturedin the above-described manner. As above-mentioned, in this embodiment,like in the first embodiment above, the gettering material 17 a whichreacts with oxygen more easily than hydrogen does is preliminarilydiffused into the inside of the Cu wiring joint part and into thevicinity of the joint-side surface of the Cu wiring joint part, beforeadhesion of the first wiring part 10 and the second wiring part 20. Inthis embodiment, therefore, the same effect as that of the firstembodiment above can be obtained.

In addition, while the treatment for diffusion of the gettering material17 a has been performed before the polishing of the Cu film 51 in thefirst embodiment above, in this embodiment the treatment for diffusionof the gettering material 17 a is conducted after the polishingtreatment of the Cu film 51 (after the formation of the first Cu wiringjoint part 18). In this case, it is possible in this embodiment toreduce the possible diffusion region (the volume of the diffusionregion) of the gettering material 17 a, as compared with that in thefirst embodiment above. Therefore, from such viewpoints as effectiveutilization of the gettering material 17 a and the ease of control ofthe concentration of the gettering material 17 a in the first Cu wiringjoint part 18, for example, the manufacturing technique in thisembodiment has an advantage over that in the first embodiment.

It is to be noted here, however, that while the respective heatingtreatments are carried out individually for tightening the Cu film 51and for diffusing the gettering material 17 a in the present embodiment,both the treatments can be carried out by a single heating treatment inthe first embodiment as above-mentioned. Therefore, from the viewpointof reducing the number of process steps, the manufacturing techniqueaccording to the first embodiment is advantageous over that according tothis second embodiment.

4. Third Embodiment

While an example wherein the oxygen gettering layer is provided betweenthe Cu wiring joint part and the Cu barrier layer has been described inthe first and second embodiments above, a configuration example whereinno oxygen gettering layer is provided between a Cu wiring joint part anda Cu barrier layer will be described in this third embodiment.

[Configuration of Semiconductor Apparatus]

FIG. 7 shows an example of a semiconductor apparatus, for example, asolid-state imaging apparatus, according to the present embodiment. FIG.7 is a schematic sectional view of the vicinity of a Cu—Cu jointinterface in the semiconductor apparatus according to this embodiment.For simplification of description, FIG. 7 shows only a schematicconfiguration of the vicinity of one Cu—Cu joint interface. Besides, inthe semiconductor apparatus 2 in this embodiment shown in FIG. 7, thesame configurations as those in the semiconductor apparatus 1 in thefirst embodiment above are denoted by the same reference symbols as usedabove.

As shown in FIG. 7, the semiconductor apparatus 2 includes a firstwiring part 60 (first semiconductor part) and a second wiring part 70(second semiconductor part). Besides, in this embodiment, like in thefirst embodiment above, the surface on the first interlayer dielectric15 side of the first wiring part 60 and the surface on the secondinterlayer dielectric 25 side of the second wiring part 70 are adheredto each other, to fabricate the semiconductor apparatus 2.

The first wiring part 60 includes a first semiconductor substrate (notshown), a first SiO₂ layer 11, a first Cu barrier film 12, a first Cuwiring body 13, a first Cu diffusion preventive film 14, the firstinterlayer dielectric 15, a first Cu barrier layer 16, and a first Cuwiring joint part 18 (first wiring). Incidentally, as is clear fromcomparison of FIG. 7 with FIG. 4, the configuration of the first wiringpart 60 in the present embodiment is the same as the configuration ofthe first wiring part 10 in the first embodiment above, except that theoxygen gettering layer is not provided between the first Cu barrierlayer 16 and the first Cu wiring joint part 18.

On the other hand, the second wiring part 70 includes a secondsemiconductor substrate (not shown), a second SiO₂ layer 21, a second Cubarrier film 22, a second Cu wiring body 23, a second Cu diffusionpreventive film 24, the second interlayer dielectric 25, a second Cubarrier layer 26, and a second Cu wiring joint part 28 (second wiring).Incidentally, as is clear from comparison of FIG. 7 with FIG. 4, theconfiguration of the second wiring part 70 in this embodiment is thesame as the configuration of the second wiring part 20 in the firstembodiment above, except that the oxygen gettering layer is not providedbetween the second Cu barrier layer 26 and the second Cu wiring jointpart 28.

In the semiconductor apparatus 2 according to this embodiment, as shownin FIG. 7, a current 40 flows from the second Cu wiring body 23 of thesecond wiring part 20 and through the second Cu barrier layer 26 into ajoint portion between the second Cu wiring joint part 28 and the firstCu wiring joint part 18. Then, the current 40 having flowed into thejoint portion between the second Cu wiring joint part 28 and the firstCu wiring joint part 18 flows through the first Cu barrier layer 16 intothe first Cu wiring body 13.

[Semiconductor Apparatus Manufacturing Technique (Cu—Cu JoiningTechnique)]

Now, a technique of manufacturing the semiconductor apparatus 2according to this embodiment will be described below, referring to FIGS.8A to 8J. FIGS. 8A to 8J mainly illustrate only the treatment procedureof a Cu—Cu joining technique in the semiconductor apparatus 2 of thepresent embodiment. Therefore, FIGS. 8A to 8J show a schematic sectionof the vicinity of a Cu—Cu joint interface. In addition, in thisembodiment, the second wiring part 70 can be fabricated in the samemanner as the first wiring part 60. As for other treatments (FIGS. 8A to8I) than an adhering treatment (FIG. 8J), therefore, only treatments ofthe first wiring part 60 will be described here, for simplification ofdescription. Incidentally, the other steps in manufacturing thesemiconductor apparatus 2 than the Cu—Cu joining step can be carried outin the same manner as in a method of manufacturing a semiconductorapparatus, for example, a solid-state imaging apparatus, according to arelated art.

As is clear from comparison of FIGS. 8A to 8C with FIGS. 5A to 5C,treatments ranging from the formation of a wiring structure part havinga first SiO₂ layer 11, a first Cu barrier film 12 and a first Cu wiringbody 13 to the patterning of a first interlayer dielectric 15 are thesame as those in the first embodiment above. Therefore, descriptions ofthe treatments shown in FIGS. 8A to 8C are omitted here.

After the first Cu wiring body 13 is exposed in an opening part 15 a ofthe first interlayer dielectric 15 by an etching treatment shown in FIG.8C, a first Cu barrier layer 16 is formed on the surface on the openingpart 15 a side of the first interlayer dielectric 15 as shown in FIG.8D, in the same manner as in the first embodiment above. Subsequently, aCu film 51 is formed on the first Cu barrier layer 16 in the same manneras in the first embodiment above. By these treatments, as shown in FIG.8D, the Cu film 51 is buried in the region of the opening part 15 a ofthe first interlayer dielectric 15.

Next, the film formed member having the Cu film 51 buried in the regionof the opening part 15 a of the first interlayer dielectric 15 is heatedat about 100 to 400° C. for about 1 to 60 minutes by use of a heatingapparatus, for example, a hot plate or an annealing apparatus. By thisheating, the Cu film 51 is tightened to form a denser Cu film 51.

Subsequently, as shown in FIG. 8E, unnecessary portions of the Cu film51 and the first Cu barrier layer 16 are removed by CMP. Specifically,the surface on the Cu film 51 side of the film formed member is polishedby CMP until the first interlayer dielectric 15 is exposed to thesurface. As a result, the first Cu wiring joint part 18 is formed.

Next, the surface on the first Cu wiring joint part 18 side of the firstwiring part 60 is subjected to a reducing treatment, to remove an oxidefilm (oxides) from the surface of the first Cu wiring joint part 18.Specifically, the surface of the first Cu wiring joint part 18 issubjected to a wet etching treatment based on the use of, for example,formic acid or a dry etching treatment based on the use of, for example,an Ar, NH₃, H₂ or the like plasma. This results in that clear Cu isexposed at the surface of the first Cu wiring joint part 18.

Subsequently, as shown in FIG. 8F, a first oxygen gettering layer 61 isformed in a thickness of about 1 to 50 nm on the surface on the first Cuwiring joint part 18 side of the first interlayer dielectric 15 (whichhas undergone the reducing treatment) by use of such a technique as RFsputtering, for example. Incidentally, in this embodiment, before theformation of the first oxygen gettering layer 61, the surface on thefirst Cu wiring joint part 18 side of the first interlayer dielectric 15is preferably subjected to a sputtering treatment by use of an inertgas, for example, Ar gas.

Next, a resist 62 is formed on the first oxygen gettering layer 61.Thereafter, the resist 62 is subjected to a patterning treatment by useof a photolithographic technique. By this treatment, as shown in FIG.8G, the resist 62 is left only on the formation region of the first Cuwiring joint part 18 and the first Cu barrier layer 16, while the resist62 formed on the other regions is removed.

Subsequently, the first oxygen gettering layer 61 is subjected to dryetching by use of, for example, a known ICP (Induced Coupled Plasma)etching system. By this dry etching, as shown in FIG. 8H, that portionof the first oxygen gettering layer 61 which is not covered with theresist 62 is removed. Thereafter, a chemical liquid treatment isconducted by use of an organic solvent, such as NMP (N-metylpyrrolidone)or thinner, and an ammonium fluoride solution, whereby the resist 62remaining on the first interlayer dielectric 15 and the residuedeposited upon the etching treatment are completely removed.

Next, the film formed member with the first oxygen gettering layer 61formed as above is heated at about 100 to 400° C. for about one minuteto two hours in, for example, a N₂ atmosphere at the atmosphericpressure or vacuum by use of a heating apparatus, for example, a hotplate or an RTA apparatus. By this heating treatment in this embodiment,as shown in FIG. 8I, the gettering material 17 a contained in the firstoxygen gettering layer 61 is diffused into the first Cu wiring jointpart 18.

In the present embodiment, the treatments shown in FIGS. 8A to 8I aboveare conducted, to fabricate the first wiring part 60. Besides, in thisembodiment, the second wiring part 70 is fabricated in the same manneras the first wiring part 60. Then, as shown in FIG. 8J, the first wiringpart 60 and the second wiring part 70 fabricated following theabove-mentioned treatment procedure are adhered to each other. Thisadhering treatment is the same as the adhering treatment (FIG. 5G)described in the first embodiment above, and, therefore, descriptionthereof is omitted here. Incidentally, though not shown in FIG. 8J, theoxygen gettering layer is left at the joint interface Sj upon adhesionof the first wiring part 60 and the second wiring part 70. Since theoxygen gettering layer is as very thin as several nanometers, however,the oxygen gettering layer appears as if absorbed in the Cu wiring jointpart in the vicinity of the joint interface Sj upon joining, so thatsubstantially no step is generated at the joint interface Sj.

In this embodiment, the semiconductor apparatus 2 is manufactured in theabove-described manner. As above-mentioned, in the present embodiment,like in the first embodiment above, the gettering material 17 a whichreacts with oxygen more easily than hydrogen does is preliminarilydiffused into the inside of each Cu wiring joint part and into thevicinity of the joint-side surface of the Cu wiring joint part, prior tothe joining of the first wiring part 60 and the second wiring part 70.In this embodiment, therefore, the same effect as that of the firstembodiment above can be obtained.

In addition, in the present embodiment, like in the second embodimentabove, the possible diffusion region of the gettering material 17 a isthe Cu wiring joint part, which is smaller than the possible diffusionregion of the gettering material 17 a in the first embodiment above. Inthis embodiment, therefore, the same effect as that of the secondembodiment above can be obtained.

In the present embodiment, furthermore, the oxygen gettering layer isprovided on the join-side surface of the Cu wiring joint part, and thegettering material 17 a is diffused into the Cu joint part. In thisembodiment, therefore, the gettering material 17 a can be diffused in ahigher concentration in the vicinity of the Cu—Cu joint interface. As aresult, in the present embodiment, oxygen remaining in the vicinity ofthe joint interface Sj can be trapped by the gettering material 17 amore efficiently.

5. Fourth Embodiment

In a fourth embodiment, description will be made of an example whereinthe semiconductor apparatus 2 in the third embodiment describedreferring to FIG. 7 above is manufactured by a technique different fromthe technique adopted in the third embodiment. In this embodiment,therefore, description of the configuration of the semiconductorapparatus 2 will be omitted, and only the manufacturing techniquetherefor will be described.

A technique of manufacturing the semiconductor apparatus 2 according tothe present embodiment will be described referring to FIGS. 9A to 9I. InFIGS. 9A to 9I, only a Cu—Cu joining step in the semiconductor apparatus2 according to this embodiment will be mainly described. Therefore,FIGS. 9A to 9I show a schematic section of the vicinity of a Cu—Cu jointinterface. Besides, in this embodiment, a second wiring part 70 can befabricated in the same manner as a first wiring part 60. Therefore, asfor other treatments (FIGS. 9A to 9H) than an adhering treatment (FIG.9I), only treatments of a first wiring part 60 will be described here,for simplification of description. Incidentally, the other steps inmanufacturing the semiconductor apparatus 2 than the Cu—Cu joining stepcan be carried out in the same manner as in a method of manufacturing asemiconductor apparatus, for example, a solid-state imaging apparatus,according to a related art.

As is clear from comparison of FIGS. 9A to 9E with FIGS. 8A to 8E, thetreatments ranging from the formation of a wiring structure partincluding a first SiO₂ layer 11, a first Cu barrier film 12 and a firstCu wiring body 13, and cleaning thereof, to the formation of a first Cuwiring joint part 18 are the same as those in the third embodimentabove. Therefore, descriptions of the treatments shown in FIGS. 9A to 9Eare omitted here.

After the surface of the first Cu wiring joint part 18 is cleaned by atreatment shown in FIG. 9E, a resist 63 is formed on the surfaces of thefirst Cu wiring joint part 18 and a first interlayer dielectric 15.Thereafter, the resist 63 is subjected to a patterning treatment by useof a photolithographic technique. By this patterning, as shown in FIG.9F, an opening part is formed in the formation region of the first Cuwiring joint part 18 and a first Cu barrier layer 16, and the resist 63is left in the other regions. Subsequently, a first oxygen getteringlayer 64 is formed in a thickness of about 1 to 50 nm on the first Cubarrier layer 16, the first Cu wiring joint part 18 and the resist 63,in the same manner as in the first embodiment above.

Next, the film formed member in which the first oxygen gettering layer64 has been formed is subjected to a chemical liquid treatment (e.g.,lift-off treatment or the like) by use of an organic solvent, such asNMP or thinner, and an ammonium fluoride solution. By this treatment,the resist 63 remaining on the first interlayer dielectric 15 andunnecessary portions of the first oxygen gettering layer 64 formed onthe surface of the resist 63 are removed. Besides, in this instance, theresidue deposited upon the etching treatment is completely removed bythe chemical liquid treatment. Consequently, as shown in FIG. 9G, thefirst oxygen gettering layer 64 is left only on the formation regions ofthe first Cu wiring joint part 18 and the first Cu barrier layer 16.

Subsequently, the film formed member with the first oxygen getteringlayer 64 thus left is heated at about 100 to 400° C. for about oneminute to two hours in, for example, a N₂ atmosphere at the atmosphericpressure or vacuum by use of a heating apparatus, for example, a hotplate or an RTA apparatus. By this heating treatment, as shown in FIG.9H, the gettering material 17 a contained in the first oxygen getteringlayer 64 is diffused into the first Cu wiring joint part 18.

In the present embodiment, the treatments described referring to FIGS.9A to 9H above are conducted, to fabricate the first wiring part 60.Besides, in this embodiment, the second wiring part 70 is fabricated inthe same manner as the first wiring part 60. Then, as shown in FIG. 9I,the first wiring part 60 and the second wiring part 70 fabricatedfollowing the above-mentioned treatment procedure are adhered to eachother, in the same manner as in the third embodiment (the firstembodiment) above.

In the present embodiment, the semiconductor apparatus 2 is manufacturedin the above-described manner. As above-mentioned, in this embodiment,like in the first embodiment above, the gettering material 17 a whichreacts with oxygen more easily than hydrogen does is preliminarilydiffused into the inside of each Cu wiring joint part and into thevicinity of the joint-side surface of the Cu wiring joint part, prior tothe joining of the first wiring part 60 and the second wiring part 70.In this embodiment, therefore, the same effect as that of the firstembodiment above can be obtained.

In addition, in the present embodiment, like in the second embodimentabove, the possible diffusion region of the gettering material 17 a isthe Cu wiring joint part, which is smaller than the possible diffusionregion of the gettering material 17 a in the first embodiment above.Therefore, in this embodiment, the same effect as that of the secondembodiment above can be obtained.

Besides, in this embodiment, like in the third embodiment above, thegettering material 17 a can be diffused into the vicinity of the Cu—Cujoint interface in a higher concentration. Therefore, in thisembodiment, the same effect as that of the third embodiment above can beobtained.

Furthermore, in the present embodiment, in the treatment in transitionfrom FIG. 9F to FIG. 9G, the resist 63 and unnecessary portions of thefirst oxygen gettering layer 64 are removed, not by an etching treatmentbut by the chemical liquid treatment (lift-off method) using an organicsolvent or the like. In this embodiment, therefore, the semiconductorapparatus 2 can be manufactured more easily.

6. Various Modifications

Now, modifications of the Cu—Cu joining techniques and the semiconductorapparatuses according to the above-described embodiments will bedescribed below.

Modification 1

While examples wherein the size of the joint surface of the first Cuwiring joint part 18 and the size of the joint surface of the second Cuwiring joint part 28 are the same have been described in the first tofourth embodiments above, the disclosure is not restricted to thisconfiguration, and the sizes may be different. FIG. 10 illustrates anexample (Modification 1) wherein the joint surface sizes are different.FIG. 10 is a schematic sectional view of the vicinity of a Cu—Cu jointinterface in the semiconductor apparatus 3 according to Modification 1.Incidentally, in the semiconductor apparatus 3 shown in FIG. 10, thesame configurations as those in the semiconductor apparatus 1 in thefirst and second embodiments described referring to FIG. 4 above aredenoted by the same reference symbols as used above.

In the example shown in FIG. 10, the size of the joint surface of asecond Cu wiring joint part 81 of a second wiring part 80 is set smallerthan the size of the joint surface of a first Cu wiring joint part 18 ofa first wiring part 10. Incidentally, the other configurations than thejoint surface sizes are the same as the configurations in the first andsecond embodiments above. In such a configuration as this, also, oxygenremaining in the vicinity of a joint interface Sj can be trapped by thegettering material 17 a diffused into the vicinity of the jointinterface Sj, like in the first and second embodiments above. Therefore,in this embodiment, the same effects as those of the first and secondembodiments above can be obtained.

Incidentally, while an example wherein the size of the joint surface ofthe second Cu wiring joint part 81 is set smaller than the size of thejoint surface of the first Cu wiring joint part 18 has been shown inFIG. 10, this configuration is not restrictive of the presentdisclosure. For instance, the size of the joint surface of the second Cuwiring joint part 81 may be set greater than the size of the jointsurface of the first Cu wiring joint part 18.

In addition, while an example wherein the size of the joint surface ofthe first Cu wiring joint part 18 and the size of the joint surface ofthe second Cu wiring joint part 28, in the semiconductor apparatus 1(FIG. 4) in the first and second embodiments above, are set differentfrom each other has been described referring to FIG. 10, thisconfiguration is not restrictive of the present disclosure. Forinstance, the size of the joint surface of the first Cu wiring jointpart 18 and the size of the second Cu wiring joint part 28, in thesemiconductor apparatus 2 (FIG. 7) in the third and fourth embodimentsabove, may be set different from each other.

Furthermore, while examples wherein the first Cu wiring joint part 18and the second Cu wiring joint part 28 of the same size are joined toeach other without any positional error (mis-alignment) has beendescribed in the first to fourth embodiments above, this configurationis not restrictive of the present disclosure. The positions in joiningof the first Cu wiring joint part 18 and the second Cu wiring joint part28 may be out of alignment, insofar the electrical connection betweenthe joint parts is maintained.

Modification 2

In the semiconductor apparatus 2 (FIG. 7) according to the third andfourth embodiments above, description has been made of an examplewherein the oxygen gettering layer formed on the surface of each Cuwiring joint part is so thin that no step is generated at the jointinterface Sj. In the case where for example the oxygen gettering layerformed on the surface of each Cu wiring joint part is thick, however, astep may be generated at the joint interface Sj upon adhesion of thefirst wiring part 60 and the second wiring part 70 to each other. Insuch a case, therefore, in order to prevent generation of such a step atthe joint interface Sj, the surface of each Cu wiring joint part may beremoved further by an amount corresponding to the thickness of theoxygen gettering layer, followed by forming the oxygen gettering layeron the surface of the Cu wiring joint part.

FIG. 11 shows a schematic sectional view of a film formed member whereina first oxygen gettering layer is formed on the surface of a first Cuwiring joint part by such a technique as just-mentioned. In the exampleillustrated in FIG. 11, in performing the treatment in the thirdembodiment shown in FIG. 8F, first, the surface of the first Cu wiringjoint part 85 is removed further by an amount corresponding to thethickness of the first oxygen gettering layer 86 by, for example, anetching treatment or the like. This results in that the surface of thefirst Cu wiring joint part 85 is located on the first Cu wiring body 13side relative to the surface of the first interlayer dielectric 15 (thefirst Cu barrier layer 16). Thereafter, the first oxygen gettering layer86 is formed on the first Cu wiring joint part 85. This results in that,as shown in FIG. 11, the surface position of the first oxygen getteringlayer 86 on the first Cu wiring joint part 85 and the surface positionof the first interlayer dielectric 15 (the first Cu barrier layer 16)are the same.

Where each Cu wiring joint part is fabricated in such a technique asjust-mentioned, an increase in the thickness of the oxygen getteringlayer can be achieved, without generating a step at the joint interfaceSj upon adhesion of the first wiring part 60 and the second wiring part70.

Incidentally, while an example wherein the technique for fabricating theoxygen gettering layer in this example is applied to the technique offabricating the semiconductor apparatus 2 in the third embodiment abovehas been shown in FIG. 11, this is not restrictive of the presentdisclosure. For instance, the technique of fabricating the oxygengettering layer in this example may be applied to the technique offabricating the semiconductor apparatus 2 according to the fourthembodiment above. Besides, in the present disclosure, for instance, inaddition to the technique of fabricating the oxygen gettering layeraccording to this example, the configuration of Modification 1 above maybe added to the third and fourth embodiments.

Modification 3

In the various embodiments above and the various modifications above,description has been made of an example wherein the oxygen getteringlayer is formed in contact with the Cu wiring joint part and the filmformed member is annealed to diffuse (disperse) the gettering materialinto the Cu wiring joint part. The present disclosure, however, is notrestricted to this configuration. For instance, the gettering materialmay be diffused (dispersed) into the Cu wiring joint part by ionimplantation.

In addition, for example where the Cu wiring joint part is formed bysputtering, the gettering material may be sputtered simultaneously withthe formation of the Cu wiring joint part, thereby diffusing(dispersing) the gettering material into the Cu wiring joint part. Itshould be noted in this case, however, that an increase in the aspectratio (depth) of the Cu wiring joint part may make it difficult for thegettering material to be incident on (appropriately supplied to) theinside of the Cu wiring joint part. Where the aspect ratio (depth) ofthe Cu wiring joint part is great, therefore, it is preferable to formthe oxygen gettering layer in contact with the Cu wiring joint part,like in the above embodiments.

Modification 4

In the various embodiments above and the various modifications above,description has been made of an example wherein the gettering materialis diffused into both the first Cu wiring joint part and the second Cuwiring joint part. This configuration, however, is not restrictive ofthe present disclosure. For instance, the gettering material may bediffused into only one of the first Cu wiring joint part and the secondCu wiring joint part, taking into account such conditions as theconcentration of the gettering material diffused in the Cu wiring jointpart and process limitations.

More specifically, for example in the semiconductor apparatus ofModification 2 shown in FIG. 11, taking into account the thickness ofthe first oxygen gettering layer 86, an etching treatment for locatingthe surface of the first Cu wiring joint part 85 on the first Cu wiringbody 13 side relative to the surface of the first interlayer dielectric15 is separately added. In such a case, for a reduction in the number ofprocess steps (process limitations), the gettering material ispreferably diffused into only one of the first Cu wiring joint part andthe second Cu wiring joint part.

Modification 5

While an example wherein the wiring film is a Cu film has been describedin the various embodiments and modifications above, this is notrestrictive of the present disclosure. The problem of generation ofvoids at the joint interface Sj between the wiring films describedreferring to FIGS. 2A to 2D may be generated with an arbitrary metallicfilm, insofar as the wiring film is a metallic film having grainboundaries. Therefore, the Cu—Cu joining techniques described in theabove embodiments and modifications can be used also in the cases wherewiring films composed of metallic films having grain boundaries are tobe joined to each other, whereby a similar effect can be obtained.Accordingly, the wiring films may each be composed of a film of, forexample, Al, W, Ti, TiN, Ta, TaN, Ru or the like or a stacked film ofsuch films.

Modification 6

While an example wherein the technique of joining two wiring films (Cufilms) to each other is applied to a semiconductor apparatus has beendescribed in the various embodiments and modifications above, thisconfiguration is not restrictive of the present disclosure. Forinstance, the techniques for joining the wiring films (Cu films) to eachother in the above embodiments and modifications can be applied also inthe cases where two wiring films provided respectively on two substratesformed from other material than semiconductor are to be joined to eachother, whereby a similar effect can be obtained.

7. Various Application Examples

The semiconductor apparatus and manufacturing technique therefor (Cu—Cujoining technique) described in any of the various embodiments andmodifications above is applicable to various electronic devices in whichadhesion of two substrates and a Cu—Cu joining treatment are needed atthe time of manufacture thereof. Especially, the Cu—Cu joining techniquein the above-described embodiments and modifications is suitable, forexample, for manufacture of solid-state imaging apparatuses.

Application Example 1

FIG. 12 shows a semiconductor image sensor module to which thesemiconductor apparatus and manufacturing technique therefor describedin any of the various embodiments and modifications above can beapplied. The semiconductor image sensor module 200 shown in FIG. 12 hasa configuration wherein a first semiconductor chip 201 and a secondsemiconductor chip 202 are joined to each other.

The first semiconductor chip 201 incorporates a photodiode formationregion 203, a transistor formation region 204, and an analog-digitalconverter array 205. The photodiode formation region 203, the transistorformation region 204 and the analog-digital converter array 205 arestacked in this order.

In addition, the analog-digital converter array 205 is formed thereinwith through-contact parts 206. Each of the through-contact parts 206 isso formed that its one end portion is exposed to the surface on thesecond semiconductor chip 202 side of the analog-digital converter array205.

On the other hand, the second semiconductor chip 202 has a memory array,and is formed therein with contact parts 207. Each of the contact parts207 is so formed that its one end portion is exposed to the surface onthe first semiconductor chip 201 side of the second semiconductor chip202.

The through-contact parts 206 and the contact parts 207 are abutted oneach other, and, in this condition, thermocompression bonding isconducted to join the first semiconductor chip 201 and the secondsemiconductor chip 202 to each other, thereby fabricating thesemiconductor image sensor module 200. The semiconductor image sensormodule 200 thus configured is advantageous in that the number of pixelsper unit area can be increased and the thickness thereof can be reduced.

In the semiconductor image sensor module 200 in this example, the Cu—Cujoining technique in the various embodiments and modifications above canbe applied, for example, to the step of joining the first semiconductorchip 201 and the second semiconductor chip 202 to each other. In thiscase, generation of voids at the joint interface between the firstsemiconductor chip 201 and the second semiconductor chip 202 can beprevented, whereby reliability of the semiconductor image sensor module200 can be enhanced.

Application Example 2

FIG. 13 shows a schematic sectional view of a major part of a back-sideirradiation type solid-state imaging apparatus to which thesemiconductor apparatus and manufacturing technique therefor describedin any of the various embodiments and modifications above can beapplied.

A solid-state imaging apparatus 300 shown in FIG. 13 has a configurationin which a first semiconductor substrate 310 provided with a pixel arrayin a semi-product state and a second semiconductor substrate 320provided with a logic circuit in a semi-product state are joined to eachother. Incidentally, in the solid-state imaging apparatus 300 shown inFIG. 13, a flattening film 330, an on-chip color filters 331 and on-chipmicrolenses 332 are stacked in this order on the surface, on the sideopposite to the second semiconductor substrate 320 side, of the firstsemiconductor substrate 310.

The first semiconductor substrate 310 has a P-type semiconductor wellregion 311 and a multilayer wiring layer 312, and the semiconductor wellregion 311 is disposed on the flattening film 330 side. Thesemiconductor well region 311 is formed therein with, for example,photodiodes (PDs), floating diffusions (FDs), MOS (Metal OxideSemiconductor) transistors (Tr1, Tr2) constituting pixels, and MOStransistors (Tr3, Tr4) constituting a control circuit. Besides, themultilayer wiring layer 312 is formed therein with a plurality of metalwirings 314 formed through an interlayer dielectric 313, and aconnection conductors 315 formed in the interlayer dielectric 313 so asto each connect the metal wiring 314 and a corresponding MOS transistorto each other.

On the other hand, the second semiconductor substrate 320 includes, forexample, a semiconductor well region 321 formed on a surface of asilicone substrate, and a multilayer wiring layer 322 formed on thefirst semiconductor substrate 310 side of the semiconductor well region321. The semiconductor well region 321 is formed therein with MOStransistors (Tr6, Tr7, Tr8) constituting a logic circuit. In addition,the multilayer wiring layer 322 is formed therein with a plurality ofmetal wirings 324 formed through an interlayer dielectric 323, andconnection conductors 325 formed in the interlayer dielectric 323 so asto each connect the metal wiring 324 and a corresponding MOS transistorto each other.

The Cu—Cu joining techniques according to the various embodiments andmodifications above can be applied also to the back-side irradiationtype solid-state imaging apparatus 300 configured as above-mentioned.

Application Example 3

A solid-state imaging apparatus to which the Cu—Cu joining techniqueaccording to any of the various embodiments and modifications above isapplied can be applied to electronic apparatuses, for example, camerasystems such as digital cameras, video cameras, etc., cellphones havingan imaging function, or other apparatuses having an imaging function. InApplication Example 3, description will be made by taking a camera as aconfiguration example of electronic apparatus.

FIG. 14 shows a schematic configuration of a camera according toApplication Example 3. Incidentally, FIG. 14 shows a configurationexample of a video camera capable of picking up still images or videoimages.

The camera 400 in this example includes a solid-state imaging apparatus401, an optical system 402 for guiding incident light to alight-receiving sensor part of the solid-state imaging apparatus 401, ashutter device 403 provided between the solid-state imaging apparatus401 and the optical system 402, and a driving circuit 404 for drivingthe solid-state imaging apparatus 401. Furthermore, the camera 400 has asignal processing circuit 405 for processing an output signal from thesolid-state imaging apparatus 401.

The solid-state imaging apparatus 401 is fabricated by use of the Cu—Cujoining technique according to one of the various embodiments andmodifications above pertaining to the present disclosure. Theconfigurations and functions of the other components are as follows.

The optical system (optical lens) 402 guides subject light (incidentlight) coming from a subject so as to form an image of the subject on animaging plane (not shown) of the solid-state imaging apparatus 401. As aresult, signal charges are stored in the solid-state imaging apparatus401 for a predetermined period of time. Incidentally, the optical system402 may be composed of an optical lens group including a plurality ofoptical lenses. In addition, the shutter device 403 controls a lightirradiation period and a light blocking period, relating to the passageof the incident light to the solid-state imaging apparatus 401.

The driving circuit 404 supplies driving signals to the solid-stateimaging apparatus 401 and the shutter device 403. The driving circuit404, by the driving signals it supplies, controls a signal outputtingoperation for the signal processing circuit 405 of the solid-stateimaging apparatus 401 and a shutter operation of the shutter device 403.Thus, in this example, by the driving signals (timing signals) suppliedfrom the driving circuit 404, transmission of a signal from thesolid-state imaging apparatus 401 to the signal processing circuit 405is performed.

The signal processing circuit 405 applies various signal processingoperations to the signal transmitted from the solid-state imagingapparatus 401. Then, the signal (image signal) obtained through varioussignal processing operations is stored in a storage medium (not shown)such as a memory, or is outputted to a monitor (not shown).

Incidentally, the present disclosure may assume the followingconfigurations.

(1)

A semiconductor apparatus including:

a first semiconductor part including a first wiring;

a second semiconductor part which is adhered to the first semiconductorpart and which includes a second wiring electrically connected to thefirst wiring; and

a metallic oxide formed by a reaction between oxygen and a metallicmaterial which reacts with oxygen more easily than hydrogen does, themetallic oxide having been diffused into a region which includes a jointinterface between the first wiring and the second wiring and the insideof at least one of the first wiring and the second wiring.

(2)

The semiconductor apparatus according to the above paragraph (1),wherein an energy of formation necessary for formation of the metallicoxide through the reaction between the metallic material and the oxygenis lower than an energy of formation necessary for formation of waterthrough a reaction between the hydrogen and the oxygen.

(3)

The semiconductor apparatus according to the above paragraph (2),wherein the metallic material is at least one metallic material selectedfrom the group including Fe, Mn, V, Cr, Mg, Si, Ce, Ti and Al.

(4)

The semiconductor apparatus according to the above paragraphs (1) to(3), wherein the first wiring and the second wiring are each a Cuwiring.

(5)

The semiconductor apparatus according to the above paragraphs (1) to(4), further including an oxygen gettering layer which is formed incontact with at least one of the first wiring and the second wiring andwhich contains the metallic material.

(6)

The semiconductor apparatus according to the above paragraph (5),wherein the oxygen gettering layer is provided at the joint interfacebetween the first wiring and the second wiring.

(7)

An electronic device including:

a first wiring part including a first wiring;

a second wiring part which is in the state of being adhered to the firstwiring part and which includes a second wiring electrically connected tothe first wiring; and

a metallic oxide formed by a reaction between oxygen and a metallicmaterial which reacts with oxygen more easily than hydrogen does, themetallic oxide having been diffused into a region which includes a jointinterface between the first wiring and the second wiring and the insideof at least one of the first wiring and the second wiring.

(8)

A method of manufacturing a semiconductor apparatus which has a firstsemiconductor part including a first wiring and a second semiconductorpart including a second wiring, the method including:

diffusing a metallic material which reacts with oxygen more easily thanhydrogen does, into the inside of at least one of the first wiring andthe second wiring;

adhering the first semiconductor part and the second semiconductor partto each other so that the first wiring and the second wiring areelectrically connected to each other; and

heating the first semiconductor part and the second semiconductor part,in the adhered state, so as to cause the metallic material and theoxygen to react with each other.

The present disclosure contains subject matter related to that disclosedin Japanese Priority Patent Application JP 2011-066256 filed in theJapan Patent Office on Mar. 24, 2011, the entire content of which ishereby incorporated by reference.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alternations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalent thereof.

1. A semiconductor apparatus comprising: a first semiconductor part including a first wiring; a second semiconductor part which is adhered to the first semiconductor part and which includes a second wiring electrically connected to the first wiring; and a metallic oxide formed by a reaction between oxygen and a metallic material which reacts with oxygen more easily than hydrogen does, the metallic oxide having been diffused into a region which includes a joint interface between the first wiring and the second wiring and the inside of at least one of the first wiring and the second wiring.
 2. The semiconductor apparatus according to claim 1, wherein an energy of formation necessary for formation of the metallic oxide through the reaction between the metallic material and the oxygen is lower than an energy of formation necessary for formation of water through a reaction between the hydrogen and the oxygen.
 3. The semiconductor apparatus according to claim 2, wherein the metallic material is at least one metallic material selected from the group including Fe, Mn, V, Cr, Mg, Si, Ce, Ti and Al.
 4. The semiconductor apparatus according to claim 1, wherein the first wiring and the second wiring are each a Cu wiring.
 5. The semiconductor apparatus according to claim 1, further comprising an oxygen gettering layer which is formed in contact with at least one of the first wiring and the second wiring and which contains the metallic material.
 6. The semiconductor apparatus according to claim 5, wherein the oxygen gettering layer is provided at the joint interface between the first wiring and the second wiring.
 7. An electronic device comprising: a first wiring part including a first wiring; a second wiring part which is in the state of being adhered to the first wiring part and which includes a second wiring electrically connected to the first wiring; and a metallic oxide formed by a reaction between oxygen and a metallic material which reacts with oxygen more easily than hydrogen does, the metallic oxide having been diffused into a region which includes a joint interface between the first wiring and the second wiring and the inside of at least one of the first wiring and the second wiring.
 8. A method of manufacturing a semiconductor apparatus which has a first semiconductor part including a first wiring and a second semiconductor part including a second wiring, the method comprising: diffusing a metallic material which reacts with oxygen more easily than hydrogen does, into the inside of at least one of the first wiring and the second wiring; adhering the first semiconductor part and the second semiconductor part to each other so that the first wiring and the second wiring are electrically connected to each other; and heating the first semiconductor part and the second semiconductor part, in the adhered state, so as to cause the metallic material and the oxygen to react with each other. 